Extended Si Interstitial Structure: Planar {311}

Interstitial chains along [011] are linked by 8-member rings in [233] and stabilized by associated 5-member rings (along with 6-member rings) providing local four-fold coordination with distortion of tetrahedral bonds only to first nearest neighbors.

These extended interstitial defects may mediate boron (or P) diffusion during thermal annealing after implanation, produced enhanced transient diffusion (TED).

Quasiparticle calculations might yield optical signature of these and other Si defects.