Single Silicon Interstitial Defects (17 atom supercells)

BulkXHT
picture of Bulk picture of X picture of H picture of T
Structures here are as seen unrelaxed.
Green atoms (green atom) = atoms forming the defect
Red atoms (red atom) = nearest neighbors to the defect atoms

The following values are formation energies (in eV) of the relaxed defect structures.

DMC Formation Energies (eV) DFT Formation Energies (eV)

X H T

X H T
Needs' Team



Needs' Team


L-pt 17 atoms DMC 4.96(24) 4.70(24) 5.50(24)
L-pt 129 atoms LDA 3.31 3.31 3.43
L-pt 55 atoms DMC 4.96(28) 4.82(28) 5.40(28)
L-pt 129 atoms GGA(PW-91) 3.84 3.80 4.07









Wilkins' Team



Wilkins' Team


L-pt 17atoms DMC 4.92(5) 5.13(5) 4.96(5)
L-pt 17atoms LDA 3.19 3.30 3.20
L-pt 65atoms DMC 3.58(12) 3.67(13) 4.06(13)

L-pt 65atoms LDA

3.21

3.20

3.33
Γ-pt 17atoms DMC 6.23(5) 5.70(5) 6.11(5)
Γ-pt 17atoms LDA 3.18 3.29 3.21
Γ-pt 65atoms DMC ? 6.34(10) 4.93(11)

Γ-pt 65atoms LDA

3.22

3.16

3.19
X-pt 17atoms DMC 5.07(5) 5.33(5) 5.14(5)
X-pt 17atoms LDA 3.19 3.31 3.21





Baldereschi-pt LDA 3.28 3.37 3.27

A more detailed analysis can be found here.

L-pt = (0.0,0.0,0.5) in reciprocal coordinates.
X-pt = (0.0,0.5,0.5)
Baldereschi-pt = (0.14765, 0.31115, 0.4588)

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<http://www.physics.ohio-state.edu/~wilkins/group/qmc/data/singleint.html>
[Friday, 25-May-2012 18:44:26 EDT]
Edited by: wilkins@mps.ohio-state.edu on Wednesday, 19-Jan-2005 14:52:35 EST