Research: Structures and Electronic Properties of Surfaces and Interfaces
- Surface and Interface science using
- Scanning Tunneling Microscopy (STM)
- Ballistic-Electron Emission Microscopy (BEEM)
- Atomic Force Microscopy (AFM)
- Auger Electron Spectroscopy (AES)
- Ultra-High Vacuum (UHV)
- Electronic transport phenomena at the nanometer scale
- Nanometer-scale properties of complex oxide films
- Measurement and modeling of metal/nanostructure contacts
- Nm-scale electronic properties of metal contacts and extended defects in SiC
- Nanometer-scale investigation of charge injection and trapping
in metal-oxide-semiconductor (MOS) structure
- Atomic scale investigation/characterization of step dynamics and oxidation reactions on semiconductor surfaces
- Oxidation of Si
- Strain and stress of highly Boron-doped Si surface
- Evaluation of various ex situ and in situ surface preparation techniques
- B segregation on annealed Si surface
Background: STM image of 50 Angstrom Pt film on SiO2.