Publications
- Conduction band energies and hot-electron transport characteristics of epitaxial Sc2O3/Si(111)
studied by ballistic electron emission microscopy and internal photoemission, W. Cai, S. E. Stone and J. P. Pelz, L. F. Edge and D. G. Schlom, Appl. Phys. Lett. 91, 042901 (2007)
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- Controlling Au/n-GaAs Junctions by Partial Molecular Monolayers, Hossam Haick, Jonathan P. Pelz, Marianna Ambrico, David Cahen, Wei Cai, Teresa Ligonzo, Camelia Marginean, Christian Tivarus, and Raymond T. Tung,
Phys. Stat. Sol. (A) 2031, 3438 (2006).
- Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy, K.-B. Park, Y. Ding, J. P. Pelz, P. G. Neudeck, and A. J. Trunek,
Appl. Phys. Lett. 89, 042103 (2006)
[ Full text (PDF: 96 kB)]
- Evidence for diffusion-limited kinetics during electromigration-induced step bunching on Si(111), B.J. Gibbons, S. Schaepe, and J.P. Pelz,
Surf. Sci. 600, 2417 (2006).
[ Full text (PDF: 382 kB)]
- Scanning Capacitance Microscopy for Thin Film Measurements, D. T. Lee, J. P. Pelz, and B. Bhushan,
Nanotechnology 17, 1484 (2006).
[ Full text (PDF: 342 kB)]
- Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by
ballistic electron emission microscopy, K.-B. Park, J. P. Pelz, J. Grim, and M. Skowronski, Appl. Phys. Lett. 87, 232103 (2005)
[ Full text (PDF: 124 kB)]
- Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well
Schottky contacts, C. Tivarus, J. P. Pelz, M. K. Hudait, and S. A. Ringel, Appl.
Phys. Lett. 87, 182105 (2005)
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- Nanoscale characterization of metal/semiconductor nanocontacts, C. Tivarus, K.-B. Park, M.K. Hudait, S.A. Ringel, and J. P. Pelz,
Characterization and Metrology for ULSI Technology 2005, edited by D.G. Seiler, A. C. Diebold, R. McDonald, C. R. Ayre, R. P. Khosla,
S. Zollner, E. M. Secula (American Institute of Physics, New York N.Y., 2005) p. 280.
- Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC,
K.-B. Park, Y. Ding, J. P. Pelz, M. K. Mikhov, Y. Wang, and B. J. Skromme, Appl. Phys. Lett. 86,
222109 (2005)
[ Full text (PDF: 118 kB)]
- Direct measurement of quantum confinement effects at metal to quantum well nanocontacts, C. Tivarus, J. P. Pelz, M. K. Hudait, and S. A. Ringel, Phys. Rev. Lett. 94, 206803 (2005).
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- Influence of Si deposition on the electromigration induced step bunching instability on Si(111), B. J. Gibbons, J. Noffsinger, and J. P. Pelz, Surf. Sci. Lett. 575, L51 (2005).
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- Scanning-Tunneling Spectroscopy of surface-state electrons scattered by a slightly disordered two-dimensional dilute solid: Ce superlattice on Ag(111), M. Ternes, C. Weber, M. Pivetta, F. Patthey,
J. P. Pelz, T. Giamarchi, F. Mila, and W. D. Schneider, Phys. Rev. Lett. 93, 146805 (2004).
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- Coverage dependent self-organization: from individual adatoms to adatom supperlattices, F. Silly, M. Pivetta, M. Ternes, F. Patthey, J. P. Pelz, and W. D. Schneider, New J. of Phys. 6, 16 (2004).
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- Comparison of mixed anion, InAsyP1-y and mixed cation, InxAl1-xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates, M. K. Hudait, Y. Lin, M. N. Palmisiano, C. A. Tivarus, J. P. Pelz, and S. A. Ringel, J. Appl. Phys. 95, 3952 (2004).
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- Cubic inclusions in 4H-SiC studied with ballistic electron-emission microscopy, Y. Ding, K. -B. Park, J. P. Pelz, K. C. Palle, M. K. Mikhow, B. J. Skromme, H. Meidia, and S. Mahajan, J. Vac. Sci. Technol. A 22(4), 1351 (2004).
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- Quantum well state of self-forming 3C-SiC inclusions in 4H-SiC determined by ballistic electron emission microsopy, Y. Ding, K. -B. Park, J. P. Pelz, K. C. Palle, M. K. Mikhow, B. J. Skromme, H. Meidia, and S. Mahajan, Phys. Rev. B 69, 041305 (2004), Rapid Communication.
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- Creation of an Atomic Superlattice by Immersing Metallic Adatoms in a Two-Dimensional Electron Sea, F. Silly, M. Pivetta, M. Ternes, F. Patthey, J. P. Pelz, and W. D. Schneider, Phys. Rev. Lett. 92, 016101 (2004).
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- Ballistic Electron Emission Microscopy Study of p-type 4H-SiC, Y. Ding, K.-B. Park, J.P. Pelz, A.V. Los and M.S. Mazzola, Mater. Sci. Forum 457-460, 1077 (2004).
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- Simulations of denuded-zone during growth on surfaces with anisotropic diffusion, C. Ebner, K. -B. Park, J. -F. Nielsen, and J. P. Pelz, Phys. Rev. B 68, 245404 (2003).
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- Avalanche ballistic electron emission microscopy with single hot-electron sensitivity, E. R. Heller, C. Tivarus, J. P. Pelz, Appl. Phys. Lett. 83, 2841 (2003).
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- Observation of a scanning tunneling microscopy induced photocurrent during ballistic electron emission microscopy, E. R. Heller, J. P. Pelz, Appl. Phys. Lett. 82, 3919 (2003).
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- High Quality InAsyP1-y step-graded buffer by molecular-beam epitaxy, M. K. Hudait, Y. Lin, D. M. Wilt, J. S. Speck, C. A. Tivarus, E. R. Heller, J. P. Pelz, and S. A. Ringel, Appl. Phys. Lett. 82, 3212 (2003).
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- Reading the ripples of confined surface state electrons: Profiles of constant integrated local density of states, M. Pivetta, F. Silly, F. Patthey, J. P. Pelz, and W. D. Schneider, Phys. Rev. B 67, 193402-1 (2003).
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- Relaxed InAsP layers grown on step graded buffer by molecular-beam epitaxy, M. K. Hudait, Y. Lin, C. L. Andre, P. M. Sinha, C. A. Tivarus, J. P. Pelz, D. M. Wilt, and S. A. Ringel, Mat. Res. Soc. Symp. Proc. Vol. 722, p K10.2.1 (2002).
- Calculated potential profile near charged threading dislocations at metal/semiconductor interfaces, C. Tivarus, Y. Ding, and J. P. Pelz, J. Appl. Phys. 92, 6010 (2002).
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- Instrumentation for direct, low frequency scanning capacitance microscopy, and analysis of position dependent stray capacitance, David T. Lee, J. P. Pelz, and Bharat Bhushan, Rev. Sci. Instrum. 73, 3525 (2002).
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- Controlled Striped Phase Formation on Ultraflat Si(001) Surfaces During Diborane Exposure, J.-F. Nielsen, J. P. Pelz, H. Hibino, C.-W. Hu, I. S. T. Tsong, and J. Kouvetakis, Appl. Phys. Lett. 79, 3857 (2001).
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- Enhanced Terrace Stability for Preparation of Step-Free Si(001)-(2 x 1) Surfaces, J.-F. Nielsen, J. P. Pelz, H. Hibino, C.-W. Hu, and I. S. T. Tsong, Phys. Rev. Lett. 87, 136103 (2001).
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- Characterization of Individual Threading Dislocations in GaN Using Ballistic Electron Emission Microscopy, H.-J. Im, Y. Ding, J. P. Pelz, B. Heying, and J. S. Speck, Phys. Rev. Lett. 87, 106802 (2001).
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- Nanometer-scale test of the Tung model of Schottky-barrier height inhomogeneity, H.-J. Im, Y. Ding, J. P. Pelz, and W. J. Choyke, Phys. Rev. B 64, 075310 (2001).
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- Anisotropy of mass transport on Si(001) surfaces heated with direct current, J. –F. Nielsen, M. S. Pettersen, and J. P. Pelz, Surface Science 480, 84 (2001).
- Observation of direct-current induced step bending patterns on Si(001), J. –F. Nielsen, M. S. Pettersen, and J. P. Pelz, Surface Review and Letters 7, 577 (2000).
- Scanning Tunneling Microscopy Study of B/Si(001), J.-F. Nielsen, H.-J. Im, J. P. Pelz, M. Krueger, B. Borovsky, and E. Ganz, J. Vac. Sci. Technol. A, 17, 1670 (1999).
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- Effect of Tensile Strain on B-type Step Energy on Si(001)-(2 x 1) Surfaces Determined by Switch-kink Counting, E. R. Heller, D. E. Jones, J. P. Pelz, Y. H. Xie, and P. J. Silverman, J. Vac. Sci. Technol. A 17, 1663 (1999).
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- Effect of surface steps on oxide-cluster nucleation and sticking of oxygen on Si(001) surfaces, V. Brichzin and J. P. Pelz, Phys. Rev. B 59, 10138 (1999).
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- Ultra-High Vacuum Dual Fluid Line Rotatable Connector, B. Kaczer, D. E. Jones, H.-J. Im, and J. P. Pelz, J. Vac. Sci. Technol. A, 17, 674 (1999).
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- Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy, B. Kaczer, H.-J. Im, J. P. Pelz, R. M. Wallace, Appl. Phys. Lett. 73, 1871 (1998).
[ Full text (PDF: 120 kB)]
- Investigation of Ultra-thin SiO2 Film Thickness Variations by Ballistic Electron Emission Microscopy, B. Kaczer, H.-J. Im, and J. P. Pelz,
J. Vac. Sci. Technol. B, 16, 2302 (1998).
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- Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure
on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy,
H.-J. Im, B. Kaczer, J. P. Pelz, J. Chen, and W. J. Choyke,
Material Science Forum, Vols. 264-268, 813 (1998).
[ Abstract (html);
Preprint (PDF: 243 kB)]
- Nanometer-Scale Investigation of Metal-SiC Interfaces using Ballistic Electron
Emission Microscopy, H.-J. Im, B. Kaczer, J. P. Pelz, S. Limpijumnong, W. R. L. Lambrecht,
and W. J. Choyke, J. Electron. Mater. 27, 345 (1998).
[Abstract (html);
Preprint (PDF: 319 kB)]
- Direct Observation of Conduction Band Structure of 4H- and
6H-SiC
by Ballistic Electron Emission Microscopy, B. Kaczer, H.-J. Im, J. P. Pelz,
J. Chen, and W. J. Choyke, Phys. Rev. B, 57, 4027 (1998).
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- Ballistic Electron Emission Microscopy Study of Metal Schottky Contacts
on 6H- and 4H-SiC, H.-J. Im, B. Kaczer, J. P. Pelz, and W. J. Choyke,
Appl. Phys. Lett. 72, 839 (1998).
[ Full text (PDF: 402 kB)]
- Equilibrium Configuration of Atomic Steps on Vicinal Si(001) Surfaces with External Biaxial Strain,
C. Ebner, D. E. Jones, and J. P. Pelz, Phys. Rev. B, 56, 1581 (1997).
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- Ballistic-electron emission microscopy studies of charge trapping in SiO2,
B. Kaczer and J. P. Pelz, J. Vac. Sci. Technol. B 14, 2864 (1996).
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- Nanometer-Scale Creation and Characterization of Trapped Charge in SiO2 Films
Using Ballistic Electron Emission Microscopy, B. Kaczer, Z. Meng, and J. P. Pelz,
Phys. Rev. Lett. 77, 91 (1996).
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- Striped phase and temperature dependent step shape transition on highly B-doped
Si(001)-(2x1) surfaces, D. E. Jones, J. P. Pelz, Y. Hong, E. Bauer, and I. S. T. Tsong,
Phys. Rev. Lett. 77, 330 (1996).
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- Strain field imaging on Si/SiGe(001)-(2x1) surfaces by low-energy electron
microscopy and scanning tunneling microscopy, D. E. Jones, J. P. Pelz,
Y. Hong, I. S. T. Tsong, Y.-H. Xie, and P. J. Silverman, Appl. Phys. Lett.
69, 3245 (1996).
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- Oxide Cluster Nucleation, Growth, and Saturation on Si(001)-(2x1) surfaces: Atomic-scale measurements and models,
J. V. Seiple, C. Ebner, and J. P. Pelz, Phys. Rev. B, 53, 15432 (1996).
- Enhanced Step Waviness on SiGe(001)-(2x1) Surfaces Under Tensile Strain,
D. E. Jones, J. P. Pelz, Y.-H. Xie, P. J. Silverman, and G. H. Gilmer,
Phys. Rev. Lett. 75, 1570 (1995).
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- Scanning Tunneling Microscopy Study of Cleaning Procedures for SiGe(001) Surfaces,
D. E. Jones, J. P. Pelz, Y.-H. Xie, P. J. Silverman, and E. A. Fitzgerald,
Surf. Sci. 341, L1005 (1995)
- Simulation of a Lattice Model for the Evolution of Si(001) Surfaces Exposed to Oxygen at Elevated Temperatures,
C. Ebner, J. V. Seiple, and J. P. Pelz, Phys. Rev. B, 52, 16651 (1995).
- Evolution of Atomic-Scale Roughening on Si(001)-(2x1) Surfaces Resulting From High Temperature Oxidation,
J. V. Seiple and J. P. Pelz, J. Vac. Sci. Technol. A 13, 772 (1995).
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- Scanning Tunneling Microscopy Study of Oxide Nucleation and Oxidation-Induced
Roughening at Elevated Temperatures on the Si(001)-(2x1) Surface,
J. V. Seiple and J. P. Pelz, Phys. Rev. Lett. 73, 999 (1994)
- Alignment of Adsorbate-Induced Defects on Si(001)-(2x1) Observed with STM,
J. V. Seiple and J. P. Pelz, "Interface Control of Electrical, Chemical, and Mechanical Properties,"
(MRS Symposia Proceedings, Vol. 318), S. P. Murarka, K. Rose, T. Ohmi, and T. Seidel, eds.
(Materials Research Society, Pittsburgh, 1994), pp 25-30.
- Elevated Temperature Oxidation and Etching of the Si(111)-(7x7) Surface Observed with STM,
J. V. Seiple, J. Pecquet, Z. Meng, and J. P. Pelz, J. Vac. Sci. Technol. A 11, 1649 (1993).