June Hyoung Park

PREVIOUS INSTITUTION: BS, Seoul National University, Seoul, Korea
DATE JOINED GROUP: June 2001
AREAS OF STUDY: Doped conducting polymer field effect device physics
EMAIL: park.521@osu.edu

CURRENT RESEARCH
Organic or polymer material has a lot of interesting features, especially, it is easy to manipulate and low-cost. However, the devices based on this material have shown their poor response time, which is not appropriate for application to electric circuits. One of our research directions is to improve the performance of polymer field effect transistors in speed. We have used Bayer's Baytron P as active material. For device performance, we make insulating layer very thin (approximately 15 ~ 25 nm) with poly(4-vinylphenol), which makes switching-off time (1%) enhanced up to sub-second and our devices also show good durability under repeated experiments. When we measure current-voltage (IV) characteristics, our devices show good saturation effect like conventional silicon-based field effect transistors. Based on the features of our devices, we have constructed inverting amplifiers with amplification factor of up to 20 and bandwidth of 100 mHz or lower. We also constructed current source circuits by using saturation effect in field effect transistor.

PRESENTATIONS AT CONFERENCES
1) J.H. Park, O.Waldmann, F.C. Hsu, N.R. Chiou, V.N. Prigodin, Y. Kim, and A.J. Epstein, "Fabrication and IV characteristics of PEDOT-PSS based field effect devices and their applications to electric circuits", APS March Meeting, Austin TX (2003).

Return to the main page
Webpage created 12 March 2003 by John Rohrbacher

Contact the webmaster