Fang-Chi Hsu



PREVIOUS INSTITUTION: BS, National Taiwan University, Taiwan
DATE JOINED GROUP: Fall 1999
AREAS OF STUDY: Doped conducting polymer field effect device physics
EMAIL: hsu.170@osu.edu


CURRENT RESEARCH
Plastic electronics has been intensively developed recently due to several advantages over the traditional silicon industry. In our lab, we have fabricated field effect type devices based on highly doped conducting polymers on both glass and flexible substrates. Unlike the conventional field effect transistors, our devices do not operate in GHz range but less than 1 Hz. The slow switching time of the order of minutes implies that ion motion plays the central role in the operation of such kind of fancy structure. The work in characterizing the ion motion becomes a fundamental part in modeling this kind of devices.


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