Degradation of hexagonal silicon carbide-based bipolar devices

Marek Skowronski
Carnegie Mellon, Materials Science

A joint nanostructures/CME Seminar

Abstract: Silicon carbide displays multiple characteristics that make it ideally suited by efficient high voltage switching devices. The commercialization of this technology has been hampered by degradation of SiC p-n junctions due to the expansion of Shockley-type stacking faults. The faults gradually cover most of the junction area and impede current flow. This seminar will cover the properties of faults in hexagonal SiC polytypes and their bounding dislocations as well as the mechanism and driving force for fault expansion. Finally, the approaches to the reduction/elimination of this effect will be discussed.