BACKGROUND Dr. Leonard J. Brillson leads an interdisciplinary research effort in the key focus area of Electronic Materials at The Ohio State University. Dr. Brillson holds a joint appointment between the Department of Electrical Engineering,the Department of Physics, and the Center for Materials Research Professor Brillson has established his OSU lab to conduct atomic-scale electronic and chemical studies of metallic and heterojunction interfaces, initially involving wide band gap semiconductors such GaN, SiC and Si-based dielectrics. He is promoting interdisciplinary programs in electronic materials across the Center for Materials Research.

Professor Leonard J. Brillson

Brillson formerly directed Xerox Corporation's Materials Research Laboratory and had responsibility for Xerox's long-range physical science and technology programs at the company's research headquarters in Rochester, N.Y. He is a senior member of the Institute of Electrical and Electronics Engineers (IEEE), a Fellow of the American Vacuum Society and the American Physical Society , a Governing Board member of the American Institute of Physics, has served on the board of editors for numerous technical journals, and has more than 190 professional publications including technical articles, invited reviews, monographs and books. Selected publications are shown below.

Dr. Brillson received his A.B. degree in physics from Princeton and his Ph.D. in physics from the University of Pennsylvania.

Professor Leonard J. Brillson

RESEARCH INTERESTS Semiconductors, surface science, electronic materials interfaces, semiconductor growth, processing, and characterization, defects, laser annealing, luminescence, metal-semiconductor contacts, heterojunctions, nanoelectronics, optoelectronics. Dr. Brillson has a broad research program in the structure and properties of electronic materials interfaces, emphasizing compound semiconductors for high speed microelectronic and optoelectronic device structures, wide band gap semiconductors for sensor and display applications, and thin film dielectrics for insulating gate structures. Understanding and control of such interfaces focuses on atomic-scale reaction and diffusion processes to control formation of localized electronic states, dipoles, Schottky barrier heights, and heterojunction band offsets. Experimental studies of electronic, chemical, and geometrical structure utilizing UV, X-ray, and soft x-ray photoemission spectroscopies, low energy (spatially-localized) cathodoluminescence and photoluminescence "buried interface" spectroscopies, Auger electron spectroscopy (AES) with sputter depth profiling, low energy electron diffraction (LEED), scanning tunneling microscopy (STM), Kelvin probe surface photovoltage spectroscopy, conventional device transport techniques, and in-situ chemical processing via directed energy beams. The scaling down of electronic device dimensions into the nanometer-scale regime emphasizes the need for first-principles, atomic-scale control of interface properties. Recent advances include the discovery of heterojunction band offset variations with local atomic movements near interfaces and the role of localized trap states in controlling charge transfer across nanoparticle contacts.

Dr. Brillson's office is located at:

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• L. J. Brillson, S. Silence, "Patterned Conducting Elements for Development Subsystems", U.S. Patent No. 5,643,706, issued 7/1/97.
• A.D. Raisanen, L.J. Brillson, L. Vanzetti, A. Bonanni, and A. Franciosi, "Atomic Diffusion-Induced Deep Levels Near ZnSe/GaAs(100) Interfaces," Applied Physics Letters 66, 3301 (1995).
• L.J. Brillson, "Multi-Color Photosensitive Element with Heterojunctions", U.S. Patent No. 5,138,416, issued 8/18/92.
• L.J. Brillson, "Surfaces and Interfaces: Atomic-Scale Structure, Band Bending and Band Offsets," in Handbook on Semiconductors, Volume 1, ed. P.T. Landsberg (North-Holland, Amsterdam, 1992), ch.7, pp. 281-417.
• S. Chang, L.J. Brillson, Y.J. Kime, D.S. Rioux, D. Pettit, and J.M. Woodall, "Orientation-Dependent Chemistry and Schottky Barrier Formation at Metal- GaAs Interfaces," Physical Review Letters 64, 2551 (1990).
• L.J. Brillson, "The Structure and Properties of Metal-Semiconductor Interfaces," Surface Science Reports 2, 123 (1982).
• J. Schafer, A.P. Young, L.J. Brillson, H. Niimi, and G. Lucovsky, "Depth-Dependent Spectroscopic Defect Characterization of The Interface Between Plasma-Deposited SiO₂ and Silicon," Applied Physics Letters 73 ,791 (1998).