Materials Science: Defects in Silicon: Abstract

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Thermally activated reorientation of di-interstitial defects in silicon

Jeongnim Kim,1 Florian Kirchhoff,2 Wilfried G. Aulbur,1 John W. Wilkins,1 Furukh S. Khan,2 and Georg Kresse3

1Department of Physics, Ohio State University, Columbus, OH 43210, USA

2Department of Electrical Engineering, Ohio State University, Columbus, OH 43210, USA

1Institut für Theoretische Physik, Technische Universität Wien, Wiedner Hauptstrasse 8-10/136, A-1040 Wien, Austria

We propose a di-interstitial model for the P6 center commonly observed in ion implanted silicon. The di-interstitial structure and transition paths between different defect orientations can explain the thermally activated transition of the P6 center from low-temperature C1h to room-temperature D2d symmetry. The activation energy for the defect reorientation determined by ab initio calculations is 0.5 eV in agreement with experiment. Our di-interstitial model establishes a link between point defects and {311} defects, supporting the growth model by interstitial nucleations.

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Materials Science: Defects in Silicon: Abstract
<http://www.physics.ohio-state.edu/~aulbur/sidefect/sidefect0.html>

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