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| Fengyuan Yang |
| Department of Physics |
2006 Physics Research Building |
| 191 W. Woodruff Avenue |
| 614-688-4390 |
| Contact Professor Yang |
| Research web page for Professor Yang |
Research interests include:
1. magnetic interaction and magnetotransport in multilayers and
patterned structures, such as the exchange interaction in
multilayers with perpendicular anisotropy, magnetic domain
structures, and magnetotransport in lateral connected magnetic
heterostructures; 2. multi-functional oxides, such as the
fabrication of epitaxial multiferroic films (e.g., BiFeO3) by UHV
sputtering and structural, ferromagnetic, ferroelectric and optical
characterization of multiferroic films; 3. spin injection and
detection in semiconductor nanowire heterostructures, such as
fabrication of Si, GaAs, InP and other III-V, II-VI semiconductor
nanowires by laser-assisted chemical vapor deposition, spin
injection from metallic and semiconducting ferromagnets into
semiconductor nanowires through nano-contacts or tunnel junctions,
detection of spin currents in semiconductors using polarized light
emission from semiconductor LEDs, and electrical spin detection in
semiconductor nanowires with without the influence of spurious
effects, e.g., Hall effect. |
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