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Roberto Myers
Department Materials Science and Engineering

478 Watts Hall
2041 College Rd.
614-292-8439
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The Myers group started in October 2008 and is currently recruiting graduate students for the MSE or ECE PhD program. Our research focuses on epitaxial growth of wide bandgap semiconductors (III-Nitrides) using the technique of molecular beam epitaxy (MBE) to engineer optical, electronic, and magnetic properties at nanometer length scales. We are studying new types of quantum structures: quantum wells, quantum dots, two dimensional electron gases with applications in high efficiency lighting, lasers, telecommunications, optical storage, magnetic semiconductors and spintronics. We have a newly rennovated optical characterization laboratory in the Materials Science and Engineering department for performing optical absorption and luminescence spectroscopy from ultraviolet to infrared wavelengths and from ambient to cryogenic temperature.