|
|
| Siddarth Rajan |
| Electrical & Computer Engineering |
205 Dreese Laboratory
|
| 2015 Neil Avenue |
| 614-247-7922 |
| Contact Professor Rajan |
| Research web page for Professor Rajan |
The broad theme in our research is to engineer new semiconductor materials and their physical properties to create devices with improved performance and functionality.
Gallium Nitride is one of the newest semiconductors that has generated great excitement from researchers as well as the electronics industry. The unique properties of Gallium Nitride
and its alloys make it promising for several relevant technologies including high-speed and high-voltage transistors, solid state lighting, lasers, photovoltaics, and sensors.
Our aim is to innovate in materials and device design to fully realize the potential of this versatile material. Our research involves
-design of new structures that give favorable electronic properties,
-growth of these structures using molecular beam epitaxy (MBE),
-fabrication of electronic devices using advanced clean room fabrication techniques, and
-characterization of materials and devices using material and electrical testing methods
Such a combination of device and materials development allows us to apply advanced lattice, heterostructure, and polarization engineering for the development of future GaN devices including high-performance transistors, photovoltaics, and sensors.
|
|
|